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UF640-P Dataheets PDF



Part Number UF640-P
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet UF640-P DatasheetUF640-P Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UF640-P 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse trans.

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UNISONIC TECHNOLOGIES CO., LTD UF640-P 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 1 Power MOSFET TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free UF640L-TA3-T UF640G-TA3-T Package TO-220 Pin Assignment 123 GDS Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-Q17.A UF640-P Power MOSFET  ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Drain-Gate Voltage (RGS=20kΩ) VDSS VDGR 200 V 200 V Gate-Source Voltage Continuous Drain Current VGSS ID ±20 V 18 A Pulsed Drain Current (Note 2) Single Pulse Avalanche Energy Rating (Note 2) IDM EAS 72 A 580 mJ Maximum Power Dissipation Junction Temperature PD 123 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C. 3. Pulse width limited by TJ(MAX)  THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 1.01 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-A17.A UF640-P Power MOSFET  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current BVDSS IDSS IGSS ID=250μA, VGS=0V VDS = Rated BVDSS, VGS = 0V VGS= ±20V ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On Resistance VGS(THR) VGS=VDS, ID=250μA RDS(ON) VGS=10V, ID=10A DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS=25V, VGS=0V, f=1MHz SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge tD(ON) tR tD(OFF) tF QG(TOT) QGS QGD VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature VGS=10V, ID≈18A, VDS=0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note) VSD TJ=25°C, IS=18A, VGS=0V, Continuous Source Current (body dio.


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