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UNISONIC TECHNOLOGIES CO., LTD UF640-P
18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET
DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.
The UF640-P suitable for resonant and PWM converter topologies.
FEATURES
* RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
1
Power MOSFET TO-220
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640L-TA3-T
UF640G-TA3-T
Package TO-220
Pin Assignment 123 GDS
Packing Tube
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-Q17.A
UF640-P
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Drain-Gate Voltage (RGS=20kΩ)
VDSS VDGR
200 V 200 V
Gate-Source Voltage Continuous Drain Current
VGSS ID
±20 V 18 A
Pulsed Drain Current (Note 2) Single Pulse Avalanche Energy Rating (Note 2)
IDM EAS
72 A 580 mJ
Maximum Power Dissipation Junction Temperature
PD 123 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C. 3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case
SYMBOL θJA θJC
RATINGS 62.5 1.01
UNIT °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-A17.A
UF640-P
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current
BVDSS IDSS IGSS
ID=250μA, VGS=0V VDS = Rated BVDSS, VGS = 0V VGS= ±20V
ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On Resistance
VGS(THR) VGS=VDS, ID=250μA RDS(ON) VGS=10V, ID=10A
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON) tR
tD(OFF) tF
QG(TOT)
QGS
QGD
VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature
VGS=10V, ID≈18A, VDS=0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
VSD TJ=25°C, IS=18A, VGS=0V,
Continuous Source Current (body dio.