UF600

UNISONIC TECHNOLOGIES CO., LTD UF600 A, 600V, N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UF600 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage, etc.  FEATURES * RDS(on)<1.2kΩ @VGS=0V, ID=3mA RDS(on)<1.8kΩ @VGS=10V, ID=16mA * High switching speed * high breakdown voltage  ORDERING INFORMATION Ordering Number UF600G-AE2-R Note: Pin Assignment: G: Gate D: Drain Package SOT-23-3 S: Source Pin Assignment 123 SGD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-502-A20.B UF600 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±20 V Drain Current Continuous Pulsed ID IDM 0.185 0.740 A A Power Dissipation Junction Temperature PD 0.50 W TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=-5V VDS=480V VDS=540V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage Stati...