PXFC192207SH

PXFC192207SH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207SH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC192207SH Package H-37288G-4/2 Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 22 56 21 Gain 48 20 40 19 32 18 24 17 16 16 Efficiency 8 15 29 c192207sh_g1 0 33 37 41 45 49 53 Output Power (dBm) Features Broadband internal input and output matching Typical Pulsed CW performance, 1880 MHz, 28 V, 10 µs pulse width, 10% duty cycle, class AB - Output power at P1dB = 220 W - Efficiency = 55% - Gain = 20 dB Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF - Output power = 50 W - Efficiency = 29% - Gain = 20 dB - ACPR = –34 dBc @5 MHz Capable of handling 10:1 VSWR @28 V, 200 W (CW) output power Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon production test fixture) VDD = 28 V, IDQ = 1600 mA, POUT = ...