PXFC192207NF

PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1875 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21 56 20 Gain 48 19 40 18 32 17 24 16 16 15 Efficiency 8 14 29 b192207nf_g1 0 33 37 41 45 49 53 Output Power (dBm) PXFC192207NF Package PG-HBSOF-4-1 Features Broadband internal input and output matching Typical Pulsed CW performance, 1880 MHz, 28 V, 10 µs pulse width, 10% duty cycle, single side - Output power at P1dB = 220 W - Efficiency = 56% - Gain = 19 dB Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 64DPCH - Output power = 50 W avg - Efficiency = 34% - Gain = 20 dB - ACPR = –33 dBc @ 5 MHz Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in In...