Thermally-Enhanced High Power RF LDMOS FET
PTVA120251EA
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
Description
The PTVA120251EA LDMOS ...
Description
PTVA120251EA
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA120251EA Package H-36265-2
Output Power (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C
300 µs pulse width, 12% duty cycle
60 Efficiency
55
70 60
50
45
40
35
30 18
Output Power
50
40
1200 MHz
1300 MHz 30
1400 MHz
1200 MHz 1300 Mhz
20
1400 MHz
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10
22 26 30 34
Input Power (dBm)
Features
Unmatched input and output High gain and efficiency Integrated ESD protection ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001 Low thermal resistance Excellent ruggedness...
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