DB3 Diacs Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

Silicon Bidirectional Diacs

Manufacture

TGS

Total Page 2 Pages
Datasheet
Download DB3 Datasheet


DB3
TIGER ELECTRONIC CO.,LTD
DB3/DB4
Silicon Bidirectional Diacs
VOLTAGE RANGE: 28-45 V
DO-35
Features
The three layer,two termnal,axial lead,hermetically
1111sealed diacs are designed specifically for triggering
1111thyristors.They demonstrate low breakover current at
1111breakover voltage as they withstand peak pulse
1111current,The breakover symmetry is within three
1111volts(DB3,DB4). These diacs are intended for use in
CCCthyrisitors phase control,circuits for lamp dimming,
FFFI universal motor speed control,and heat control.
ABSOLUTE RATINGS
Parameters
Symbols
Dimensions in inches and (millimeters)
DB3,DB4
UNITS
Power dissipation on printed
TA=50oC circuit (L=10mm)
Pc
Repetitive peak on-state
current
tp=20 S
f=120Hz
ITRM
Operating junction temperature
TJ
Storage temperature
TSTG
ELECTRICAL CHARACTERISTICS
150.0
2.0
-40--- +125
-40--- +125
Parameters
Test Conditions
Breakover voltage (NOTE 1)
C=22nf(NOTE 2)
VBO See FIG.1
Breakover voltage symmetry
Dynamic breakover voltage (NOTE 1)
I+VBO I-
I-VBOI
I± VI
C=22nf(NOTE 2)
See FIG.1
I=(IBO to IF=10mA)
See FIG.1
Output voltage (NOTE 1)
Vo See FIG.2
Breakover current (NOTE 1)
Rise time (NOTE 1)
Leakage current (NOTE 1)
IBO C=22nf(NOTE 2)
tr See FIG.3
IR
VR=0.5 VBO
See FIG.1
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.
2.Connected in parallel w ith the devices
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
DB3 DB4
28 35
32 40
36 45
±3.0
5.0
5.0
100.0
1.5
10.0
mW
A
oC
oC
UNITS
V
V
V
V
A
S
A

DB3
DB3/DB4
Silicon Bidirectional Diacs
Ratings and Characteristic Curves
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
+IF
10mA
IBO
IB
-V
0.5VBO
+V
220V
60Hz
10K 500KD.U.T
0.1µ F
Vo R=20
VBO
-IF
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A
90%
IP
10%
tr
FIG.4--POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
P(mW)
160
140
120
100
80
60
40
20
Tamb( )
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
VBO(TJ)
1.08 VBO(TJ=25 )
1.06
1.04
TJ( )
1.02
1.00
25 50 75
100 125
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
PULSE DURATION(MAXIMUM VALUES)
ITRM(A)
2
1
f=100Hz
TJ initial=25
0.1
tp(µ s)
0.01
10
100 1000 10000


Features TIGER ELECTRONIC CO.,LTD DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28- 45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111se aled diacs are designed specifically fo r triggering 1111thyristors.They demons trate low breakover current at 1111brea kover voltage as they withstand peak pu lse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). The se diacs are intended for use in CCCthy risitors phase control,circuits for lam p dimming, FFFI universal motor speed c ontrol,and heat control. ABSOLUTE RATI NGS Parameters Symbols Dimensions in inches and (millimeters) DB3,DB4 UNIT S Power dissipation on printed TA=50oC circuit (L=10mm) Pc Repetitive peak on-state current tp=20 S f=120Hz ITRM Operating junction temperature TJ S torage temperature TSTG ELECTRICAL CH ARACTERISTICS 150.0 2.0 -40--- +125 -4 0--- +125 Parameters Test Conditions Breakover voltage (NOTE 1) C=22nf(NOT E 2) VBO See FIG.1 Breakover voltage symmetry Dynamic breakove.
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