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Part Number DB4
Manufacturers TGS
Logo TGS
Description Silicon Bidirectional Diacs
Datasheet DB4 DatasheetDB4 Datasheet (PDF)

TIGER ELECTRONIC CO.,LTD DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These diacs are intended for use in CCCthyrisitors phase control,circuits for lamp dimming, FFFI universal motor.

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TIGER ELECTRONIC CO.,LTD DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These diacs are intended for use in CCCthyrisitors phase control,circuits for lamp dimming, FFFI universal motor speed control,and heat control. ABSOLUTE RATINGS Parameters Symbols Dimensions in inches and (millimeters) DB3,DB4 UNITS Power dissipation on printed TA=50oC circuit (L=10mm) Pc Repetitive peak on-state current tp=20 S f=120Hz ITRM Operating junction temperature TJ Storage temperature TSTG ELECTRICAL CHARACTERISTICS 150.0 2.0 -40--- +125 -40--- +125 Parameters Test Conditions Breakover voltage (NOTE 1) C=22nf(NOTE 2) VBO See FIG.1 Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) I+VBO II-VBOI I± VI C=22nf(NOTE 2) See FIG.1 I=(IBO to IF=10mA) See FIG.1 Output voltage (NOTE 1) Vo See FIG.2 Breakover current (NOTE 1) Rise time (NOTE 1) Leakage current (NOTE 1) IBO C=22nf(NOTE 2) tr See FIG.3 IR VR=0.5 VBO See FIG.1 NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions. 2.Connected in parallel w ith the devices Min Typ Max Max Min Min Max Typ Max DB3 DB4 28 35 32 40 36 45 ±3.0 5.0 5.0 100.0 1.5 10.0 mW A oC oC UNITS V V V V A S A DB3/DB4 Silicon Bidirectional Diacs Ratings and Characteristic Curves FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE +IF 10mA IBO IB -V 0.5VBO +V 220V 60Hz 10K 500KD.U.T 0.1µ F Vo R=20 VBO -IF FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A 90% IP 10% tr FIG.4--POWER DISSIPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) P(mW) 160 140 120 100 80 60 40 20 Tamb( ) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) VBO(TJ) 1.08 VBO(TJ=25 ) 1.06 1.04 TJ( ) 1.02 1.00 25 50 75 100 125 FIG.6--PEAK PULSEE CURRENT VERENT VERSUS PULSE DURATION(MAXIMUM VALUES) ITRM(A) 2 1 f=100Hz TJ initial=25 0.1 tp(µ s) 0.01 10 100 1000 10000 .


DB3 DB4 DF005


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