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1N6264

Fairchild Semiconductor

GaAs INFRARED EMITTING DIODE

1N6264 GaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) FEATURES • Good optical to mechanical ...


Fairchild Semiconductor

1N6264

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1N6264 GaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) FEATURES Good optical to mechanical alignment Mechanically and wavelength matched to the TO-18 series phototransistor Hermetically sealed package 0.030 (0.76) NOM 0.255 (6.48) High irradiance level (*) Indicates JEDEC registered values 1.00 (25.4) MIN ANODE (CASE) DESCRIPTION The 1N6264 is a 940 nm LED in a narrow angle, TO-46 package. SCHEMATIC ANODE (Connected To Case) CATHODE 3 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) 0.040 (1.02) 45° 1 3 Ø0.020 (0.51) 2X NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 H steradians. ABSOLUTE MAXIMUM RATINGS * * * * * * * * Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = ...




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