1N6265
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
FEATURES
• Good optical to mechanical ...
1N6265
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
FEATURES
Good optical to mechanical alignment Mechanically and wavelength matched to the TO-18 series photo
transistor
0.030 (0.76) NOM
Hermetically sealed package
0.155 (3.94) MAX
High irradiance level (*) Indicates JEDEC registered values
1.00 (25.4) MIN
SCHEMATIC
ANODE (CASE)
DESCRIPTION
The 1N6265 is a 940 nm LED in a narrow angle, TO-46 package.
0.100 (2.54) 0.050 (1.27)
ANODE (Connected To Case) CATHODE
3
1
0.040 (1.02) 0.040 (1.02) 45°
1
3 Ø0.020 (0.51) 2X
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 H steradians.
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature *Storage Temperature *Soldering Temperature (Iron)(3,4,5 and 6) *Soldering Temperature (Flow)(3,4 and 6) *Continuous Forward Current *Forward Current (pw, 1µs; 200Hz) *Reverse Voltage *Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2)
(TA = 25°C...