2SK2586
2SK2586
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 7 m t...
Description
2SK2586
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO-3P
ADE-208-358 C 4th. Edition
D
G1 2 3 1. Gate 2. Drain (Flange)
S 3. Source
2SK2586
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS ID*2 I *1
D(pulse)
I DR* 2 I AP * 3 EAR* 3 Pch*2
Tch
Tstg
Ratings 60 ±20 60 240 60 45 174 125 150 –55 to +150
Unit V V A A A A mJ W °C °C
2
2SK2586
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
60
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 1.0 —
—
Forward transfer admittance |yfs|
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test
Ciss Coss Crss t d(on) tr t d(off) tf VDF
t rr
35
— — — — — — — —
—
Typ Max Unit ...
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