N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and hig...
Description
UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
8N60L-TA3-T
8N60G-TA3-T
8N60L-TF1-T
8N60G-TF1-T
8N60L-TF2-T
8N60G-TF2-T
8N60L-TF3-T
8N60G-TF3-T
8N60L-T2Q-T
8N60G-T2Q-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 TO-220F
TO-262
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
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www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-115.G
8N60
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R502-115.G
8N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
600 V ±30 V
Avalanc...
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