N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
2N7002T
300mA, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002T uses advanced tec...
Description
UNISONIC TECHNOLOGIES CO., LTD
2N7002T
300mA, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
2N7002TG-AN3-R
SOT-523
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 SGD
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-542.C
2N7002T
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60 V
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60 V
Gate Source Voltage
Continuous Non Repetitive(tp<50μs)
VGSS
20 40
V
Drain Current
Continuous Pulsed
ID
300 800
mA
Power Dissipation Derated Above 25°C
PD
200 mW 1.6 mW/°C
Junction Temperature
TJ
+ 150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Ambient
SYMBOL θJA
RATINGS 625 (Note1)
UNIT °C/W
ELECT...
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