2N7002Z

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002ZL-AE2-R 2N7002ZG-AE2-R 2N7002ZL-K03-1006-R 2N7002ZG-K03-1006-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 DFN1006-3 Pin Assignment 123 GSD GSD Packing Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-273.M 2N7002Z  MARKING SOT-23-3 / SOT-323 / SOT-523 / SOT-723 CPL L: Lead Free G: Halogen Free Power MOSFET DFN1006-3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-273.M 2N7002Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 60 V VGSS ±20 V Drain Current Continuous Pulse(Note 2) ID 300 800 mA Power Dissipation SOT-23-3 DFN1006-3 PD 225 mW 150 mW Junction Temperature Storage Temperature TJ +150 °C TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which...