BGA2031-1

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 NXP Semiconductors MMIC variable gain amplifier Product specification BGA2031/1 FEATURES  High gain  Excellent adjacent channel power rejection  Small SMD package  Low dissipation. APPLICATIONS  General purpose variable gain amplifier for low voltage and medium power  Driver for power amplifiers in systems that require good linearity, such as CDMA, both cellular band (850 MHz) and PCS (1.9 GHz). This is because of the high output power and good linearity. DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 6-pin SOT363 SMD plastic package for low voltage medium power applications. PINNING PIN 1 2 3 4 5 6 DESCRIPTION RFin CTRL VS1 VS2 + RFout GND GND handbook, halfpage 6 54 VS1 RFin 12 Top view 3 CTRL BIAS CIRCUIT Marking code: A3 VS2+RFout GND MAM440 Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL VS1 VS2 IS PARAMETER supply voltage supply voltage supply current; pins 3 and 4 PL ACPR Gp G load power adjacent channel power rejection power gain gain control range CONDITIONS VCTRL = 0 VCTRL = 2.7 V; VS = 3 V VCTRL = 2.4 V; VS = 3 V at 1 dB gain compression point; f = 1.9 GHz f = 1.9 GHz; PL = 10 dBm f = 836 MHz; PL = 8 dBm f = 1.9 GHz; PL = 12 dBm f = 836 MHz; PL = 8 dBm f = 836...