BSC060N10NS3G

OptiMOSTM3 Power-Transistor Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 BSC060N10NS3 G Product Summary V DS R DS(on),max ID 100 V 6 mΩ 90 A PG-TDSON-8 Type BSC060N10NS3 G Package PG-TDSON-8 Marking 060N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage I D,pulse E AS V GS T C=25 °C I D=50 A, R GS=25 Ω Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 90 66 14.9 360 230 ±20 125 -55 ... 150 55/150/56 Unit A mJ V W °C Rev. 2.4 page 1 2009-10-21 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area2) BSC060N10NS3 G min. Values typ. Unit max. - - 1 K/W - - 62 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current...