UT30P03

UNISONIC TECHNOLOGIES CO., LTD UT30P03 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Power MOSFET  FEATURES * RDS(ON) ≤ 40mΩ @ VGS=-10V, ID =-10A RDS(ON) ≤ 60mΩ @ VGS=-4.5V, ID =-10A * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain 1 TO-252 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT30P03L-TN3-R UT30P03G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-335.D UT30P03 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage Continuous Drain Current VGSS ID ±20 -30 V A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 4A 16 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.35 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 30A, di/dt ≤200A/μs, VDD ...