P-CHANNEL MOSFET. UT3403 Datasheet

UT3403 MOSFET. Datasheet pdf. Equivalent

UT3403 Datasheet
Recommendation UT3403 Datasheet
Part UT3403
Description P-CHANNEL MOSFET
Feature UT3403; UNISONIC TECHNOLOGIES CO., LTD UT3403 -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The .
Manufacture UTC
Datasheet
Download UT3403 Datasheet




UTC UT3403
UNISONIC TECHNOLOGIES CO., LTD
UT3403
-2.6 Amps, 30 Volts
P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT3403 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3403G-AE2-R
UT3403G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23-3
SOT-23
Pin Assignment
123
SGD
SGD
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UTC UT3403
UT3403
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
-30
± 12
V
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1)
ID
IDM
-2.6 A
-20 A
Power Dissipation(Note 3)
Junction Temperature
PD 1.4 W
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
MIN
TYP
100
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
MAX
125
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
ID=-250μA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
-30 V
-1 µA
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250μA
VGS=-10V, ID=-2.6A
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
-0.6 -1 -1.4 V
102 130 m
128 180 m
187 260 m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS =0V, VDS =-15V, f=1MHz
409 500
55
42
pF
pF
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=-10V, VDS=-15V
RL=6, RG =3
VGS=-4.5V, VDS=-15V,
ID=-2.5A
5.3 8
4.4 9
31.5 45
8 16
4.4 5.3
0.8
1.32
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-1A
Maximum Continuous Drain-Source Diode
Forward Current
IS
-0.85
-1
-2
V
A
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
IF=-2.5A, dI/dt=100A/μs
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
15.8 19
8 12
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTC UT3403
UT3403
TYPICAL CHARACTERISTICS
Power MOSFET
On-Resistance vs. Drain Current and
250 Gate Voltage
VGS=-2.5V
200
150
100
50
0
VGS=-4.5V
VGS=-10V
1234
Drain Current,-ID (A)
5
6
On-Resistance vs. Gate-Source Voltage
300
ID=-2A
250
200
125
150
100
25
50
0
0 2 4 6 8 10
Gate to Source Voltage,-VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance Characteristics
600
500
CISS
400
300
200
100 COSS
CRSS
0
0 5 10 15 20 25
Drain to Source Voltage,-VDS (V)
30
1.0E+01
Body-Diode Characteristics
1.0E+00
1.0E-01
125
1.0E-02
1.0E-03
25
1.0E-04
1.0E-05
1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Body Diode Forward Voltage,-VSD (V)
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