N-CHANNEL MOSFET. UT3404 Datasheet

UT3404 MOSFET. Datasheet pdf. Equivalent

UT3404 Datasheet
Recommendation UT3404 Datasheet
Part UT3404
Description N-CHANNEL MOSFET
Feature UT3404; UNISONIC TECHNOLOGIES CO., LTD UT3404 N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UT3404 is .
Manufacture UTC
Datasheet
Download UT3404 Datasheet




UTC UT3404
UNISONIC TECHNOLOGIES CO., LTD
UT3404
N-CHANNEL ENHANCEMENT
MODE MOSFET
DESCRIPTION
The UT3404 is N-Channel enhancement mode power MOSFET,
designed with high density cell, with fast switching speed, low
on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
Drain
Power MOSFET
Gate
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3404L-AE3-R
UT3404G-AE3-R
UT3404L-AG6-R
UT3404G-AG6-R
UT3404L-S08-R
UT3404G-S08-R
Note: Pin Assignment: G: Gate S: Source
Package
SOT-23
SOT-26
SOP-8
D: Drain
Pin Assignment
1234567
GSD - - - -
DDGSDD -
S S SGDDD
8
-
-
D
Packing
Tape Reel
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
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UTC UT3404
UT3404
MARKING
PACKAGE
SOT-23
SOT-26
SOP-8
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-146.G



UTC UT3404
UT3404
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
Continuous Drain Current (Note 3)
VGSS
ID
±20
5.8
V
A
Pulsed Drain Current (Note 1, 2)
SOT-23
IDM
20 A
1.4 W
Power Dissipation
SOT-26
PD
1.6 W
SOP-8
2W
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)
SOT-23
SOT-26
SOP-8
SYMBOL
θJA
RATINGS
85
115
62.5
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30 V
1 uA
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Drain-Source On-State Resistance (Note 2)
VGS(TH)
ID(ON)
RDS(ON)
VDS=VGS, ID=250uA
VGS=4.5V, VDS=5V
VGS=10V, ID=5.8A
VGS=4.5V, ID=5A
1 1.9 3
V
20 A
22.5 28 m
34.5 43 m
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V,VDS=15V, f=1.0MHz
680 820
102
77
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=15V, VGS=10V, RG=3,
RD=2.7
VDS=15V, VGS=10V, ID=5.8A
4.6
3.8
20.9
5
13.88
1.8
3.12
6.5
5.7
30
7.5
17
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD IS=1A
Maximum Continuous Drain-Source Diode
Forward Current
IS
0.76 1
2.5
V
A
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF=5.8A, dI/dt=100A/μs
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board.
16.1 21
7.4 10
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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