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UT5504 Dataheets PDF



Part Number UT5504
Manufacturers UTC
Logo UTC
Description P-CHANNEL MOSFET
Datasheet UT5504 DatasheetUT5504 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UT5504 P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced technology. The UTC UT5504 can be used in applications such as DC/DC converters, all commercial-industrial surface mount and low voltage devices.  FEATURES * Low On-Resistance * Simple Drive Requirement.

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UNISONIC TECHNOLOGIES CO., LTD UT5504 P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced technology. The UTC UT5504 can be used in applications such as DC/DC converters, all commercial-industrial surface mount and low voltage devices.  FEATURES * Low On-Resistance * Simple Drive Requirement * Fast Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT5504L-TM3-T UT5504G-TM3-T TO-251 UT5504L-TN3-R UT5504G-TN3-R TO-252 UT5504L-S08-R UT5504G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1234567 8 GDS - - - - GDS - - - - SSSGDDD D Packing Tube Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-417.F UT5504  MARKING TO-220 / TO-220F / TO-252 Power MOSFET SOP-8 UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw 2 of 5 QW-R502-417.F UT5504 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C TC=70°C ID -8 A -6 A Pulsed Drain Current IDM -32 A Single Pulsed Avalanche Energy (Note 3) EAS 77 mJ Power Dissipation TO-251/TO-252 SOP-8 PD 41 W 1.6 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=30mH, IAS=-2.26A, VDD=-20V, RG=25Ω, Starting TJ=25°C  THERMAL DATA (NOTE 3) PARAMETER SYMBOL RATINGS Junction to Ambient TO-251/TO-252 SOP-8 θJA 50 90 Junction to Case TO-251/TO-252 SOP-8 θJC 3 78 Notes: 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1% 3. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNIT °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw 3 of 5 QW-R502-417.F UT5504 Power MOSFET  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current On-State Drain Current (Note 1) BVDSS IDSS IGSS ID(ON) ID=-250µA, VGS=0V -40 VDS=-32V, VGS=0V VDS=-30V, VGS=0V, TJ=125°C VDS=0V, VGS=±20V VDS=-5V, VGS=-10V -32 V 1 10 µA ±250 nA A ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) VGS(TH) RDS(ON) VDS=VGS, ID=-250µA VGS=-4.5V, ID=-6.0A VGS=-10V, ID=-8.0A -1.0 -2.5 V 55 38 94 55 mΩ DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF VGS=0V, VDS=-10V, f=1MHz VGS=-10V, VDS=0.5BVDSS, ID=-8.0A VGS=-10V, VDS=-20V, ID ≒ -8.0A, RGS=6Ω 860 pF 160 pF 140 pF 25 120 nC 5.8 nC 4.8 nC 7.2 35 ns 17.6 50 ns 38 250 ns 24 120 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Current IS Pulsed Current (Note 3) ISM Drain-Source Diode Forward Voltage (Note 1) VSD IF=IS, VGS=0V Reverse Recovery Time Reverse Recovery Charge tRR QRR IF=-5.0A, dIF/dt=100A/µs Notes: 1. Pulse test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2 %. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. -8 A -32 A -1.2 V 98 ns 220 nC UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw 4 of 5 QW-R502-417.F UT5504  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current, -ID (µA) 250 200 150 100 50 00 10 20 30 40 50 60 Drain-Source Breakdown Voltage, -BVDSS (V) Drain Current, -ID (µA) Power MOSFET Drain Current vs. Gate Threshold Voltage 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 Gate Threshold Voltage, -VTH (V) Drain Current, -ID (A) Drain Current, -ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or i.


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