Document
UNISONIC TECHNOLOGIES CO., LTD
UT5504
P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced technology.
The UTC UT5504 can be used in applications such as DC/DC converters, all commercial-industrial surface mount and low voltage devices.
FEATURES
* Low On-Resistance * Simple Drive Requirement * Fast Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UT5504L-TM3-T
UT5504G-TM3-T
TO-251
UT5504L-TN3-R
UT5504G-TN3-R
TO-252
UT5504L-S08-R
UT5504G-S08-R
SOP-8
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 1234567 8 GDS - - - - GDS - - - - SSSGDDD D
Packing
Tube Tape Reel Tape Reel
www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-417.F
UT5504
MARKING
TO-220 / TO-220F / TO-252
Power MOSFET
SOP-8
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
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QW-R502-417.F
UT5504
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC=25°C TC=70°C
ID
-8
A
-6
A
Pulsed Drain Current
IDM
-32
A
Single Pulsed Avalanche Energy (Note 3)
EAS
77
mJ
Power Dissipation
TO-251/TO-252 SOP-8
PD
41
W
1.6
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=30mH, IAS=-2.26A, VDD=-20V, RG=25Ω, Starting TJ=25°C
THERMAL DATA (NOTE 3)
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
TO-251/TO-252 SOP-8
θJA
50 90
Junction to Case
TO-251/TO-252 SOP-8
θJC
3 78
Notes: 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%
3. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT °C/W °C/W °C/W °C/W
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www.unisonic.com.tw
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QW-R502-417.F
UT5504
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current On-State Drain Current (Note 1)
BVDSS
IDSS
IGSS ID(ON)
ID=-250µA, VGS=0V
-40
VDS=-32V, VGS=0V
VDS=-30V, VGS=0V, TJ=125°C
VDS=0V, VGS=±20V
VDS=-5V, VGS=-10V
-32
V
1 10
µA
±250 nA
A
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1)
VGS(TH) RDS(ON)
VDS=VGS, ID=-250µA VGS=-4.5V, ID=-6.0A VGS=-10V, ID=-8.0A
-1.0
-2.5 V
55 38
94 55
mΩ
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time
CISS COSS CRSS
QG QGS QGD tD(ON) tR tD(OFF)
tF
VGS=0V, VDS=-10V, f=1MHz
VGS=-10V, VDS=0.5BVDSS, ID=-8.0A
VGS=-10V, VDS=-20V, ID ≒ -8.0A, RGS=6Ω
860
pF
160
pF
140
pF
25 120 nC
5.8
nC
4.8
nC
7.2 35 ns
17.6 50 ns
38 250 ns
24 120 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Pulsed Current (Note 3)
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IF=IS, VGS=0V
Reverse Recovery Time Reverse Recovery Charge
tRR QRR
IF=-5.0A, dIF/dt=100A/µs
Notes: 1. Pulse test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2 %.
2. Independent of operating temperature.
3. Pulse width limited by maximum junction temperature.
-8 A
-32 A
-1.2 V
98
ns
220
nC
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
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QW-R502-417.F
UT5504
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source Breakdown Voltage
300
Drain Current, -ID (µA)
250 200 150 100
50
00 10 20 30 40
50 60
Drain-Source Breakdown Voltage, -BVDSS (V)
Drain Current, -ID (µA)
Power MOSFET
Drain Current vs. Gate Threshold Voltage 300
250 200 150 100
50
0 0 0.5 1 1.5 2
2.5 3
Gate Threshold Voltage, -VTH (V)
Drain Current, -ID (A)
Drain Current, -ID (A)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or i.