UTD351

UNISONIC TECHNOLOGIES CO., LTD UTD351 N-CHANNEL ENHANCEMENT MODE Power MOSFET  DESCRIPTION As N-Channel Logic Level MOSFET, UTD351 has been optimized for battery power management applications. And it’s produced using UTC’s Trench process.  SYMBOL  ORDERING INFORMATION Order Number UTD351G-AE2-R UTD351G-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-23-3 SOT-23 Pin Assignment 123 SGD SGD Packing Tape Reel Tape Reel  MARKING BCAG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-154.C UTD351 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 30 ±20 V Continuous Drain Current (Note 3) Pulsed Drain Current ID IDM 1.4 10 A Power Dissipation Junction Temperature PD 0.5 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction-to-Ambient (Note 3) Junction-to-Case SYMBOL θJA θJC MIN TYP 250 75  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) MAX UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS MIN TYP OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Tempe...