UNISONIC TECHNOLOGIES CO., LTD
UTD484
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTD484 uses a...
UNISONIC TECHNOLOGIES CO., LTD
UTD484
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment 12345678
Packing
UTD484L-TN3-T
UTD484G-TN3-T
TO-252 G D S - - - - -
Tube
UTD484L-TN3-R
UTD484G-TN3-R
TO-252 G D S - - - - - Tape Reel
- UTD484G-K08-3030-R DFN-8(3×3) S S S G D D D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-207.E
UTD484
MARKING
TO-252
Power MOSFET
DFN-8(3×3)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-207.E
UTD484
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage Continuous Drain Current
TC=25°C
VGSS ID
±20 25
V A
Pulsed Drain Current(Note 1) Avalanche Current(Note 1)
IDM 80 A IAR 15 A
Repetitive avalanche energy L=0.3mH(Note 1)
TC=25°C
TO-252 DFN-8(3×3)
EAR
33 mJ 41
Power Dissipation
TA=25°C
TO-252 DFN-8(3×3) (N...