Fast Recovery Diode
3A Avg. 200Volts 30GFA20
Fast Recovery Diode
DSE-13048(1/2)
:シリコンダイオード(FRD),リード
Construction :Diffusion-type Silicon ...
Description
3A Avg. 200Volts 30GFA20
Fast Recovery Diode
DSE-13048(1/2)
:シリコンダイオード(FRD),リード
Construction :Diffusion-type Silicon Diode,Axial Lead Type
:
Application : High-Frequency Rectification
ノイズ
trr=30ns
Feature
Low Noise High Voltage High Speed Recovery trr=30ns
OUTLINE DRAWING
Package : Axial 7
Dimension : mm
■ Weight
: 1.05g(typ.)
■ Flammability : Epoxy Resin=UL94V-0 Recognized
■ (き Ta=25℃) Absolute Maximum Ratings (Ta = 25 oC unless otherwise stated)
Item Symbol
Conditions
Rating
くりしピーク Repetitive Peak Reverse Voltage
VRRM
-
200
くりしピーク Non-Repetitive Peak Reverse Voltage
VRSM
-
220
Average Rectified Output Current
50Hz
IO
Half Sine Wave,
Ta=30℃ *1 T1=101℃
Resistive Load
(T1:Lead Temperature)
1.55 3.0
RMS Forward Current
サージ Surge Forward Current
IF(RMS) IFSM
-
50Hz 1 サイクル りし 50Hz half Sine Wave,1 cycle,Non-repetitive
4.71 60
Operation Junction Temperature Range
Tjw
- -40~+150
Storage Temperature Range
Tstg
- -40~+150
Units
V V
A
A A ℃ ℃
■・ Electrical / Thermal Characteristics
Item Symbol
Conditions
ピーク Peak Reverse Current
IRM
VRM=VRRM,Tj=25℃
ピーク Peak Forward Voltage
VFM
IFM=3.0A,Tj=25℃
Reverse Recovery Time
trr IFM=3.0A,-di/dt=50A/µs,Tj=25℃
Thermal Resistance
Rth(j-a)
・ Junction to Ambient *1
Rth(j-l)
・リード Junction to Lead
*1 : フィンし/Without Fin or P.C. Board
min.
-
-
typ.
-
-
max.
10
0.98
30
90
15
Units
µA
V
ns ℃/W ℃/W
● のはなどのためなくすることがあります。
● The content specified herein is subject to...
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