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UD3018

Unisonic Technologies

NPN POWER BIPOLAR TRANSISTORS

UNISONIC TECHNOLOGIES CO., LTD UD3018 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN POWER BIPOLAR TRANSISTORS  D...


Unisonic Technologies

UD3018

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Description
UNISONIC TECHNOLOGIES CO., LTD UD3018 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN POWER BIPOLAR TRANSISTORS  DESCRIPTION The UTC UD3018 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage and high frequency, etc. The UTC UD3018 is suitable for professional audio amplifiers and high-end consumer audio products, etc.  FEATURES * High collector-emitter breakdown voltage * High frequency * Excellent gain linearity  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free UD3018L-T3P-T UD3018G-T3P-T Pin Assignment: B: Base C: Collector E: Emitter Package TO-3P Pin Assignment 123 BCE Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-023.a UD3018 Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 250 250 V V Emitter-Base Voltage Collector-Emitter Voltage - 1.5V VEBO VCEX 5.0 250 V V Continuous Collector Current Peak Collector Current (Note 1) IC 15 A 30 A Continuous Base Current Total Power Dissipation @ TC=25°C IB PD 1.5 A 150 W Operating Junction Temperature Storage Temperature Range TJ TSTG -65~+150 -65~+150 °C °C Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be perm...




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