UG25N120

UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UG25N120 is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UG25N120L-TA3-T UG25N120G-TA3-T TO-220 UG25N120L-T3P-T UG25N120G-T3P-T TO-3P UG25N120L-T3N-T UG25N120G-T3N-T TO-3PN UG25N120L-T47-T UG25N120G-T47-T TO-247 Note: Pin Assignment: G: Gate C: Collector E: Emitte Pin Assignment 123 GCE GCE GCE GCE Packing Tube Tube Tube Tube UG25N120L-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TA3: TO-220, T3P: TO-3P, T3N: TO-3PN, T47: TO-247 (3) L: Lead Free, G: Halogen Free and Lead Free  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-050.c UG25N120 Preliminary Insulated Gate Bipolar Transistor  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage Continuous Collector Current Collec...