UG5N120

UNISONIC TECHNOLOGIES CO., LTD UG5N120 Preliminary Insulated Gate Bipolar Transistor 21A, 1200V NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES  DESCRIPTION The UTC UG5N120 is a NPT N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc. The UTC UG5N120 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors, etc.  FEATURES * Low conduction loss * Short circuit rating  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UG5N120L-TA3-T UG5N120G-TA3-T TO-220 UG5N120L-T3N-T UG5N120G-T3N-T TO-3PN UG5N120L-T47-T UG5N120G-T47-T TO-247 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GCE GCE GCE Packing Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-029.d UG5N120 Preliminary Insulated Gate Bipolar Transistor  ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Voltage Gate-Emitter Voltage BVCES VGES 1200 ±20 V V Gate to Emitter Voltage Pulsed VGEM ±30 V Collector Current Continuous TC=25°C TC=110°C IC 21 A 10 A Collector Current Pulsed (Note 1) ICM 40 A Power Dissipation Total at TC = 25°C TO-220 TO-3PN 78 W 201 W TO-247 Power Dissipation Derating TC > 25°C TO-220 PD 167 W 0.62 W/°C TO-3PN 1.6 W/°C TO-247 1.33 W/°C Short Circuit Withstand Ti...