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USS4350

UTC

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD USS4350 50V, 3A NPN LOW VCE(SAT) TRANSISTOR NPN SILICON TRANSISTOR  DESCRIPTION The U...


UTC

USS4350

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Description
UNISONIC TECHNOLOGIES CO., LTD USS4350 50V, 3A NPN LOW VCE(SAT) TRANSISTOR NPN SILICON TRANSISTOR  DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply voltage applications and inductive load driver.  FEATURES * Collector-emitter saturation voltage:50V * High collector current gain (hFE) under high IC conditions * High collector current capability * Higher efficiency resulting in less heat generation * Complementary to UTC USS5350  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package USS4350L-AA3-R USS4350G-AA3-R SOT-223 USS4350L-AB3-R USS4350G-AB3-R SOT-89 USS4350L-AE3-R USS4350G-AE3-R SOT-23 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E B E C Packing Tape Reel Tape Reel Tape Reel  MARKING PACKAGE SOT-223 SOT-89 SOT-23 www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd MARKING 1 of 4 QW-R207-022.G USS4350 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage Emitter-Base Voltage VCEO 50 V VEBO 6 V Collector Current DC IC Peak ICM 3 A 5 A Peak Base Current IBM SOT-89 1 A 1.4 Power Dissipation (TC=25°C) (Note 2) SOT-223 PD SOT-23 2 W 0.35 Junction Temperature ...




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