Power MOSFET. UT3413 Datasheet

UT3413 MOSFET. Datasheet pdf. Equivalent

UT3413 Datasheet
Recommendation UT3413 Datasheet
Part UT3413
Description Power MOSFET
Feature UT3413; UNISONIC TECHNOLOGIES CO., LTD UT3413 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT3413 is P-c.
Manufacture Unisonic Technologies
Datasheet
Download UT3413 Datasheet




Unisonic Technologies UT3413
UNISONIC TECHNOLOGIES CO., LTD
UT3413
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC UT3413 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3413G-AE2-R
UT3413G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
Package
S: Source
SOT-23-3
SOT-23
Pin Assignment
123
SGD
SGD
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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Unisonic Technologies UT3413
UT3413
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
-20
±8
V
V
Continuous Drain Current (Note 3)
ID
-3 A
Pulsed Drain Current (Note 1, 2)
IDM -15 A
Power Dissipation
Junction Temperature
PD 1.4 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
MIN
TYP
70
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
MAX
90
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0V, ID =-250µA
VDS =-16V, VGS =0 V
VDS =0V, VGS = ±8 V
-20 V
-1 µA
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance(Note 2)
VGS(TH)
RDS(ON)
VDS =VGS, ID =-250 µA
VGS =-4.5 V, ID =-3 A
VGS =-2.5 V, ID =-2.6 A
VGS =-1.8 V, ID =-1A
-0.3 -0.55 -1
81 97
108 130
146 190
V
m
m
m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =-10 V, VGS =0V, f=1MHz
540
72
49
pF
pF
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=-4.5V,VDS=-10V,
RL=3.3, RGEN =3
VDS=-10V, VGS =-4.5V, ID=-3A
10
12
44
22
6.1
0.6
1.6
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD IS=-1A, VGS=0V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-0.78 -1
-2
V
A
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
IF=-3 A, dI/dt=100A/μs
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width 300μs, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
21 ns
7.5 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-159.F



Unisonic Technologies UT3413
UT3413
TYPICAL CHARACTERISTICS
On-Region Characteristics
15
-4.5V
-8V -3.0V
-2.5V
10
-2.0V
5
VGS=-1.5V
0
012345
Drain to Source Voltage,-VDS (V)
Power MOSFET
Transfer Characteristics
6
VDS=-5V
4
2
125
25
0
0 0.5 1 1.5 2
Gate to Source Voltage,-VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-159.F







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