UT3413

UNISONIC TECHNOLOGIES CO., LTD UT3413 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT3413L-AE2-R UT3413G-AE2-R SOT-23-3 UT3413L-AE3-R UT3413G-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-159.G UT3413 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS ±8 V Continuous Drain Current (Note 3) ID -3 A Pulsed Drain Current (Note 1, 2) IDM -15 A Power Dissipation Junction Temperature PD 0.6 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Note: Surface mounted on 1 in2 copper pad of FR4 board. RATING 208  ...