N-CHANNEL MOSFET. UT3416 Datasheet

UT3416 MOSFET. Datasheet pdf. Equivalent

UT3416 Datasheet
Recommendation UT3416 Datasheet
Part UT3416
Description N-CHANNEL MOSFET
Feature UT3416; UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET 6.5A, 20V N-CHANNEL ENHANCEMENT MODE FIELD EFF.
Manufacture Unisonic Technologies
Datasheet
Download UT3416 Datasheet




Unisonic Technologies UT3416
UNISONIC TECHNOLOGIES CO., LTD
UT3416
Power MOSFET
6.5A, 20V N-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
DESCRIPTION
The UTC UT3416 is advanced N-channel enhancement
MOSFET which can provide the designer with the best combination
of excellent RDS (ON), low gate charge and low gate voltages as low
as 1.8V.When it is used as a load switch or in PWM application, the
UTC UT3416 can be considered as an ideal.
FEATURES
* RDS(ON) 22 @ VGS=4.5V, ID =6.5A
RDS(ON) 26 @ VGS=2.5V, ID =5.5A
RDS(ON) 40 @ VGS=1.8V, ID =5.0A
3
2
1
SOT-23-3
(JEDEC TO-236)
3
2
1
SOT-23
(EIAJ SC-59)
54
6
1 23
SOT-26
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3416L-AE2-R
UT3416G-AE2-R
UT3416L-AE3-R
UT3416G-AE3-R
UT3416L-AG6-R
UT3416G-AG6-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23-3
SOT-23
SOT-26
Pin Assignment
123456
Packing
G S D - - - Tape Reel
G S D - - - Tape Reel
D D G S D D Tape Reel
UT3416G-AE2-R
(1)Packing Type (1) R: Tape Reel
(2)Package Type (2) AE2: SOT-23-3, AE3: SOT-23, AG6: SOT-26
(3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
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Unisonic Technologies UT3416
UT3416
MARKING
SOT-23-3 / SOT-23
34S
L: Lead Free
G: Halogen Free
Power MOSFET
SOT-26
654
34S
L: Lead Free
G: Halogen Free
123
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Unisonic Technologies UT3416
UT3416
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID 6.5 A
Pulsed Drain Current (Note 2)
IDM 30 A
Power Dissipation (Note 3)
SOT-23-3
SOT-26
PD
1.4 W
1.6 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. Surface mounted on 1in2 copper pad of FR4 board.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
SOT-23
SOT-23-3
θJA
100
SOT-26
90
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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