UT3419

UNISONIC TECHNOLOGIES CO., LTD UT3419 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch.  FEATURES * RDS(ON) ≤ 70 mΩ @ VGS=-10V, ID=-3.5A * RDS(ON) ≤ 80 mΩ @ VGS=-4.5V, ID=-3.0A * RDS(ON) ≤ 130 mΩ @ VGS=-2.5V, ID=-1.0A  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3419L-AE2-R UT3419G-AE2-R UT3419L-AE3-R UT3419G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-391.J UT3419 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage Gate to Source Voltage VDSS -20 V VGSS ±12 V Continuous Drain Current (Note 1) TA=25°C TA=70°C ID -3.5 -2.8 A A Pulsed Drain Current (Note 2) IDM -15 A Total Power Dissipation (Note 1) TA=25°C TA=70°C PD 0.6 0.4 W W Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional d...