PSMN130-200D

DPAK PSMN130-200D N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 20 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Higher operating power due to low thermal resistance  Low conduction losses due to low on-state resistance  Suitable for high frequency applications due to fast switching characteristics 1.3 Applications  DC-to-DC converters  Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS Parameter drain-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V Ptot total power Tmb = 25 °C dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 20 A; VDS = 160 V; Tj = 25 °C Min Typ Max Unit - - 200 V - - 20 A - - 150 W - 120 130 mΩ - 22 - nC NXP Semiconductors PSMN130-200D N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description Simplified outline G gate D drain[1] mb S source D mounting base; connected to drain 2 13 SOT428 (DPAK) [1] It is not pos...