PTFA211801E

IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA211801E Package H-36260-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 30 -30 Efficiency 25 -35 IM3 -40 20 15 -45 10 -50 ACPR 5 -55 34 36 38 40 42 44 46 Average Output Power (dBm) 0 48 Features Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52% Integrated ESD protection Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, cha...