PTFA210601E

PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210601E Package H-36265-2 PTFA210601F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 35 -30 Efficiency 30 -35 IM3 -40 25 20 -45 15 ACPR -50 10 -55 31 33 35 37 39 41 Average Output Power (dBm) 5 43 Features Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 12 W - Linear Gain = 16 dB - Efficiency = 27.0% - Intermodulation distortion = –38 dBc - Adjacent channel power = –44 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 68 W - Efficiency = 58.5% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD...