PTFA211001E

PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA211001E Package H-30248-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, 8 dB P/A R, 10 MHz carrier spacing -28 -31 -34 -37 -40 -43 -46 -49 -52 -55 36 IM3 Up Ef f iciency ACPR 38 40 42 44 Average Output Power (dBm) 36 32 28 24 20 16 12 8 4 0 46 RF Characteristics Features Thermally-enhanced package, Pb-free and RoHScompliant Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 dB - Efficiency = 28.5% - Intermodulation distortion = –37 dBc - Adjacent channel power = –41 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 125 W - Efficiency = 57% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 23 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3G...