PTFA212001E

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212001E PTFA212001F IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 30 -28 Efficiency 25 -33 20 -38 IM3 -43 15 10 -48 ACPR 5 -53 34 36 38 40 42 44 46 Average Output Power (dBm) 0 48 Features Thermally-enhanced packages, Pb-free and RoHS compliant Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 50 W - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35.5 dBc - Adjacent channel power = –40 dBc Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB - Average output power = 70 W - Linear Gain = 15.5 dB - Efficiency = 34% - Adjacent channel power = –37 dBc Typical CW performance, 2170 MHz, 30 V - Output power at P–1dB = 220 W - Efficiency = 54% I...