PTFA220041M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 22...
PTFA220041M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect
Transistor 4 W, 28 V, 700 – 2200 MHz
Description
The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package.
PTFA220041M Package PG-SON-10
Gain (dB) Efficiency (%)
Two-tone Drive-up
VDD = 28 V, IDQ = 50 mA, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz
21 60
20
Gain 19
50 40
18
17 33
Efficiency
34 35 36 37 38 Output Power, PEP (dBm)
30
20 39
Features
Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR = –44 dBc
Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB
Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB
Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power
In...
