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PTFA240451E Dataheets PDF



Part Number PTFA240451E
Manufacturers Infineon
Logo Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet PTFA240451E DatasheetPTFA240451E Datasheet (PDF)

PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA240451E Package H-30265-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) Three-Carrier CDMA2000 Performanc.

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PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA240451E Package H-30265-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz 45 40 35 30 25 20 15 10 5 0 30 Efficiency ACP Up ACP Low ALT Up -38 -42 -46 -50 -54 -58 -62 Efficiency -66 -70 -74 32 34 36 38 40 42 Output Power, Avg. (dBm) Features • Thermally-enhanced, lead-free and RoHS-compliant packaging • Broadband internal matching • Typical two-carrier CDMA performance at 2450 MHz, 28 V - Average output power = 10 W - Linear Gain = 14 dB - Efficiency = 27% - Adjacent channel power = –45 dBc • Typical CW performance, 2450 MHz, 28 V - Output power at P–1dB = 50 W - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power RF Characteristics 3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz bandwidth at ƒC ± 2.135 MHz offset Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Adjacent Channel Power Ratio Gps — 14 — dB ηD — 31 — % ACPR — –45 — dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2008-03-04 PTFA240451E RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps ηD IMD Min 13.5 39 — Typ 14 40 –30 Max — — –28 Unit dB % dBc DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ = 450 mA VGS = 10 V, VDS = 0 V Symbol V(BR)DSS IDSS IDSS RDS(on) VGS IGSS Min 65 — — — 2.0 — Typ — — — 0.17 2.5 — Max — 1.0 10.0 — 3.0 1.0 Unit V µA µA Ω V µA Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 45 W CW) Symbol VDSS VGS TJ PD TSTG RθJC Value 65 –0.5 to +12 200 196 1.12 –40 to +150 0.89 Unit V V °C W W/°C °C °C/W Ordering Information Type and Version PTFA240451E V1 Package Outline H-30265-2 Package Description Thermally-enhanced slotted flange, single-ended Marking PTFA240451E Data Sheet 2 of 10 Rev. 04, 2008-03-04 PTFA240451E Efficiency (%), Output Power (W) Typical Performance (data taken in a production test fixture) IMD (dBc) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V, IDQ = 450 mA, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz -20 -30 -40 3rd Order 5th Order -50 -60 7th Order -70 -80 30 32 34 36 38 40 42 Output Power, Avg. (dBm) 44 Gain (dB) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 450 mA 16 Efficiency 57 15 55 Gain 14 53 13 Output Power 51 12 2420 2430 2440 2450 2460 Frequency (MHz) 2470 49 2480 Return Loss (dB) IMD (dBc) IM3 vs. Output Power for Selected Biases VDD = 28 V, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz -20 -30 337 mA -40 -50 -60 450 mA 562 mA -70 30 32 34 36 38 40 42 Output Power, Avg. (dBm ) 44 Gain (dB), Efficiency (%) 2-Tone Broadband Performance VDD = 28 V, IDQ = 450 mA, POUT Avg. = 43.52 dBm 50 Efficiency 40 -5 -10 30 -15 20 Gain -20 10 0 2400 2420 2440 Return Loss -25 2460 2480 -30 2500 Frequency (MHz) Data Sheet 3 of 10 Rev. 04, 2008-03-04 Power Gain (dB) Typical Performance (cont.) Power Sweep VDD = 28 V, ƒ = 2450 MHz 16.0 15.5 IDQ = 675 m A 15.0 14.5 14.0 IDQ = 450 m A 13.5 13.0 12.5 IDQ = 225 mA 12.0 30 32 34 36 38 40 42 44 46 48 Output Power (dBm) Gain (dB) PTFA240451E Drain Efficiency (%) Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz 16 15 Gain 14 13 12 Efficiency 11 10 30 34 38 42 46 Output Power (dBm) 60 50 40 30 20 10 0 50 Adj. Channel Power Ratio (dBc) Output Power (dBm) Output Power (at 1 dB Compression) vs. Supply Voltage IDQ = 450 mA, ƒ = 2450 MHz 49 48 47 46 45 24 26 28 30 Supply Voltage (V) 32 Drain Efficiency (%) IS-95 CDMA Performance VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz TCASE = .


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