Document
PTFA240451E
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz
Description
The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
PTFA240451E Package H-30265-2
Drain Efficiency (%) Adj. Ch. Power Ratio (dBc)
Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
45 40 35 30 25 20 15 10
5 0
30
Efficiency ACP Up ACP Low ALT Up
-38 -42 -46
-50
-54
-58
-62
Efficiency -66
-70
-74 32 34 36 38 40 42
Output Power, Avg. (dBm)
Features • Thermally-enhanced, lead-free and
RoHS-compliant packaging
• Broadband internal matching
• Typical two-carrier CDMA performance at 2450 MHz, 28 V - Average output power = 10 W - Linear Gain = 14 dB - Efficiency = 27% - Adjacent channel power = –45 dBc
• Typical CW performance, 2450 MHz, 28 V - Output power at P–1dB = 50 W - Efficiency = 54%
• Integrated ESD protection: Human Body Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz bandwidth at ƒC ± 2.135 MHz offset
Characteristic
Symbol Min Typ Max Unit
Gain Drain Efficiency Adjacent Channel Power Ratio
Gps — 14 — dB
ηD
— 31
—
%
ACPR
— –45
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2008-03-04
PTFA240451E
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz
Characteristic Gain Drain Efficiency Intermodulation Distortion
Symbol Gps ηD IMD
Min 13.5 39 —
Typ 14 40 –30
Max — — –28
Unit dB % dBc
DC Characteristics
Characteristic Drain-Source Breakdown Voltage Drain Leakage Current
On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ = 450 mA VGS = 10 V, VDS = 0 V
Symbol V(BR)DSS
IDSS IDSS RDS(on) VGS IGSS
Min 65 — — — 2.0 —
Typ — — — 0.17 2.5 —
Max — 1.0 10.0 — 3.0 1.0
Unit V µA µA
Ω V µA
Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation
Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 45 W CW)
Symbol VDSS VGS TJ PD
TSTG RθJC
Value 65
–0.5 to +12 200 196 1.12
–40 to +150 0.89
Unit V V °C W
W/°C °C
°C/W
Ordering Information
Type and Version PTFA240451E V1
Package Outline H-30265-2
Package Description Thermally-enhanced slotted flange, single-ended
Marking PTFA240451E
Data Sheet
2 of 10
Rev. 04, 2008-03-04
PTFA240451E
Efficiency (%), Output Power (W)
Typical Performance (data taken in a production test fixture)
IMD (dBc)
Intermodulation Distortion vs. Output Power (as measured in a broadband circuit)
VDD = 28 V, IDQ = 450 mA, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz
-20
-30 -40 3rd Order
5th Order
-50
-60 7th Order
-70
-80 30
32 34 36 38 40 42 Output Power, Avg. (dBm)
44
Gain (dB)
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 450 mA
16 Efficiency
57
15 55
Gain 14
53
13 Output Power
51
12 2420
2430
2440 2450 2460 Frequency (MHz)
2470
49 2480
Return Loss (dB)
IMD (dBc)
IM3 vs. Output Power for Selected Biases VDD = 28 V, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz
-20
-30 337 mA -40
-50 -60 450 mA
562 mA
-70 30
32 34 36 38 40 42 Output Power, Avg. (dBm )
44
Gain (dB), Efficiency (%)
2-Tone Broadband Performance VDD = 28 V, IDQ = 450 mA, POUT Avg. = 43.52 dBm
50 Efficiency
40
-5 -10
30 -15
20 Gain
-20
10
0 2400
2420
2440
Return Loss
-25
2460
2480
-30 2500
Frequency (MHz)
Data Sheet
3 of 10
Rev. 04, 2008-03-04
Power Gain (dB)
Typical Performance (cont.)
Power Sweep VDD = 28 V, ƒ = 2450 MHz
16.0 15.5 IDQ = 675 m A 15.0 14.5 14.0
IDQ = 450 m A 13.5 13.0 12.5 IDQ = 225 mA 12.0
30 32 34 36 38 40 42 44 46 48 Output Power (dBm)
Gain (dB)
PTFA240451E
Drain Efficiency (%)
Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
16
15 Gain
14
13
12 Efficiency 11
10 30
34 38 42 46 Output Power (dBm)
60 50 40 30 20 10 0 50
Adj. Channel Power Ratio (dBc)
Output Power (dBm)
Output Power (at 1 dB Compression) vs. Supply Voltage
IDQ = 450 mA, ƒ = 2450 MHz
49
48
47
46
45 24
26 28 30 Supply Voltage (V)
32
Drain Efficiency (%)
IS-95 CDMA Performance VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
TCASE = .