Thermally-Enhanced High Power RF LDMOS FET
PTFA241301E PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz
Description
The PTFA241301E...
Description
PTFA241301E PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz
Description
The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lifetime and reliability.
PTFA241301E Package H-30260-2
PTFA241301F Package H-31260-2
Drain Efficiency (%) Adj. Ch. Power Ratio (dBc)
Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 1150 mA, ƒ = 2450 MHz
45 40 ACP Up
-40 -45
35 ACP Low
30
-50 -55
25 -60
20 -65 Efficiency
15
ALT Up
-70
10 -75
5 -80 36 38 40 42 44 46 48
Output Power, Avg. (dBm)
Features
Thermally-enhanced packaging, Pb-free and RoHS-compliant
Broadband internal matching
Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%
Typical CW performance, 2420 MHz, 28 V - Output power at P–1dB = 140 W - Efficiency = 50%
Integrated ESD protection: Human Body Model, Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
RF Characteristics
Three-carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1150 mA, POUT = 25 W average, ƒ = 2450 MHz
Characteristic
Symbol Min Typ Max Unit
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