Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz
PTFA260851...
Description
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz
PTFA260851E PTFA260851F
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA260851E Package H-30248-2
PTFA260851F Package H-31248-2
Efficiency (%) EVM (dBc)
WiMAX EVM and Efficiency vs. Output Power
VDS = 28 V, IDQ = 900 mA
25 -20
2.62
20
GHz 2.68
-25
GHz
Efficiency
15 2.62
-30
10 -35 EVM
5 -40
0 -45 15 20 25 30 35 40 45
Output Power (dBm)
Features
Thermally-enhanced, Pb-free and RoHS-compliant packages
Broadband internal matching
Typical WiMAX performance at 2680 MHz, 28 V - Average output power = 16 W - Linear Gain = 14 dB - Efficiency = 22% - Error Vector Magnitude = –29 dB
Typical CW performance, 2680 MHz, 28 V - Output power at P–1dB = 100 W - Efficiency = 47%
Integrated ESD protection: Human Body Model, Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 85 W (CW) output power
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, ƒ...
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