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PTFA260851E

Infineon

Thermally-Enhanced High Power RF LDMOS FET

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851...


Infineon

PTFA260851E

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Description
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851E PTFA260851F Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficiency (%) EVM (dBc) WiMAX EVM and Efficiency vs. Output Power VDS = 28 V, IDQ = 900 mA 25 -20 2.62 20 GHz 2.68 -25 GHz Efficiency 15 2.62 -30 10 -35 EVM 5 -40 0 -45 15 20 25 30 35 40 45 Output Power (dBm) Features Thermally-enhanced, Pb-free and RoHS-compliant packages Broadband internal matching Typical WiMAX performance at 2680 MHz, 28 V - Average output power = 16 W - Linear Gain = 14 dB - Efficiency = 22% - Error Vector Magnitude = –29 dB Typical CW performance, 2680 MHz, 28 V - Output power at P–1dB = 100 W - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 85 W (CW) output power RF Characteristics WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, ƒ...




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