Document
PTFB093608SV
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz
Description
The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB093608SV Package H-37275G-6/2
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
21.0
60
20.5
50
20.0
Gain
19.5
40 30
19.0
20
18.5
18.0 35
Efficiency
40 45 50
Output Power Avg. (dBm)
10
0 55
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems and Doherty applications
• Wide video bandwidth
• Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40%
• Integrated ESD protection
• Low thermal resistance
• Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB Input Overdrive = 500 W (CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (device with straight leads, tested in Infineon test fixture) VDD = 28 V, IDQ = 2.8 A, POUT = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @ 0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Gain Drain Efficiency
Gps
18 20 — dB
hD
33.5
34
—
%
Adjacent Channel Power Ratio
ACPR
— –36 –31.5 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 05, 2015-01-22
PTFB093608SV
DC Characteristics
Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ = 2.8 A VGS = 10 V, VDS = 0 V
Symbol V(BR)DSS
IDSS IDSS RDS(on) VGS IGSS
Min 65 — — — 2.5 —
Typ — — — 0.05 3.9 —
Max — 1.0 10.0 — 4.5 1.0
Unit V µA µA W V µA
Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70°C, 360 W CW)
Symbol Value
VDSS VGS TJ TSTG RqJC
65 –6 to +10
200 –40 to +150
0.12
Unit V V °C °C
°C/W
Ordering Information
Type and Version Order Code
Package
Package Description Shipping
PTFB093608SV V2 R250 PTFB093608SVV2R250XTMA1 H-37275G-6/2 Earless flange
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 05, 2015-01-22
PTFB093608SV
Typical Performance (data taken in a production test fixture, device leads in gullwing configuration)
Single-carrier WCDMA Broadband Gain & Return Loss vs. Frequency
VDD = 28 V, IDQ = 2.8 A, POUT = 100 W
Single-carrier WCDMA Broadband Efficiency & ACPR vs. Frequency
VDD = 28 V, IDQ = 2.8 A, POUT = 100 W
21 0 42 -20
Gain (dB) Return Loss (dB) Efficiency (%)
Gain
20
-10
19
IRL
-20
18 -30 860 880 900 920 940 960 980 1000 1020
Frequency (MHz)
37
Efficiency
32
-25 -30
27
ACPU
-35
22 -40 860 880 900 920 940 960 980 1000
Frequency (MHz)
ACPR (dB)
Efficiency (%) / ACP(dBc)
ACP (dBc) Drain Efficiency (%) PAR & Gain (dB)
Single-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-20
-30
-40
ACP Low
-50
-60 ACP Up
Efficiency
-70 34
38 42 46 50
Output Power Avg. (dBm)
50 40 30 20 10 0 54
Single-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
24
Gain
20
60 40
16 Efficiency
20
12
PAR @ .01% CCDF
8
0 -20
4 ACP Low
-40
0 -60 36 38 40 42 44 46 48 50 52 54
Output Power Avg. (dBm)
Data Sheet
3 of 13
Rev. 05, 2015-01-22
PTFB093608SV
IMD (dBc) IMD & ACPR (dBc) Drain Efficiency (%)
Typical Performance (cont.)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20 960 Lower
-25 960 Upper 940 Lower
-30
940 Upper 920 Lower
920 Upper -35
-40
IMD Low
-45
-50
IMD Up
-55 36 38 40 42 44 46 48 50 52 54
Output Power Avg. (dBm)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-10 50
Efficiency
-20 40
IMD Up
-30 30
IMD Low
-40
ACPR 20
-50 10
-60 35
40 45 50
Output Power Avg. (dBm)
0 55
Broadband Circuit Impedance
Frequency MHz 910 920 930 940 950 960 970
Z Source W
R jX
1.84
–1.74
1.78
–1.73
1.72
–1.72
1.66
–1.71
1.61
–1.69
1.55
–1.66
1.50
–1.64
Z Load W
R jX
0.89
–1.