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PTFB093608SV Dataheets PDF



Part Number PTFB093608SV
Manufacturers Infineon
Logo Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet PTFB093608SV DatasheetPTFB093608SV Datasheet (PDF)

PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H.

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PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H-37275G-6/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21.0 60 20.5 50 20.0 Gain 19.5 40 30 19.0 20 18.5 18.0 35 Efficiency 40 45 50 Output Power Avg. (dBm) 10 0 55 Features • Broadband internal matching • Enhanced for use in DPD error correction systems and Doherty applications • Wide video bandwidth • Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40% • Integrated ESD protection • Low thermal resistance • Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB Input Overdrive = 500 W (CW) output power • Pb-Free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (device with straight leads, tested in Infineon test fixture) VDD = 28 V, IDQ = 2.8 A, POUT = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Gps 18 20 — dB hD 33.5 34 — % Adjacent Channel Power Ratio ACPR — –36 –31.5 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 05, 2015-01-22 PTFB093608SV DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ = 2.8 A VGS = 10 V, VDS = 0 V Symbol V(BR)DSS IDSS IDSS RDS(on) VGS IGSS Min 65 — — — 2.5 — Typ — — — 0.05 3.9 — Max — 1.0 10.0 — 4.5 1.0 Unit V µA µA W V µA Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70°C, 360 W CW) Symbol Value VDSS VGS TJ TSTG RqJC 65 –6 to +10 200 –40 to +150 0.12 Unit V V °C °C °C/W Ordering Information Type and Version Order Code Package Package Description Shipping PTFB093608SV V2 R250 PTFB093608SVV2R250XTMA1 H-37275G-6/2 Earless flange Tape & Reel, 250 pcs Data Sheet 2 of 13 Rev. 05, 2015-01-22 PTFB093608SV Typical Performance (data taken in a production test fixture, device leads in gullwing configuration) Single-carrier WCDMA Broadband Gain & Return Loss vs. Frequency VDD = 28 V, IDQ = 2.8 A, POUT = 100 W Single-carrier WCDMA Broadband Efficiency & ACPR vs. Frequency VDD = 28 V, IDQ = 2.8 A, POUT = 100 W 21 0 42 -20 Gain (dB) Return Loss (dB) Efficiency (%) Gain 20 -10 19 IRL -20 18 -30 860 880 900 920 940 960 980 1000 1020 Frequency (MHz) 37 Efficiency 32 -25 -30 27 ACPU -35 22 -40 860 880 900 920 940 960 980 1000 Frequency (MHz) ACPR (dB) Efficiency (%) / ACP(dBc) ACP (dBc) Drain Efficiency (%) PAR & Gain (dB) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz -20 -30 -40 ACP Low -50 -60 ACP Up Efficiency -70 34 38 42 46 50 Output Power Avg. (dBm) 50 40 30 20 10 0 54 Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz 24 Gain 20 60 40 16 Efficiency 20 12 PAR @ .01% CCDF 8 0 -20 4 ACP Low -40 0 -60 36 38 40 42 44 46 48 50 52 54 Output Power Avg. (dBm) Data Sheet 3 of 13 Rev. 05, 2015-01-22 PTFB093608SV IMD (dBc) IMD & ACPR (dBc) Drain Efficiency (%) Typical Performance (cont.) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.8 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 960 Lower -25 960 Upper 940 Lower -30 940 Upper 920 Lower 920 Upper -35 -40 IMD Low -45 -50 IMD Up -55 36 38 40 42 44 46 48 50 52 54 Output Power Avg. (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -10 50 Efficiency -20 40 IMD Up -30 30 IMD Low -40 ACPR 20 -50 10 -60 35 40 45 50 Output Power Avg. (dBm) 0 55 Broadband Circuit Impedance Frequency MHz 910 920 930 940 950 960 970 Z Source W R jX 1.84 –1.74 1.78 –1.73 1.72 –1.72 1.66 –1.71 1.61 –1.69 1.55 –1.66 1.50 –1.64 Z Load W R jX 0.89 –1.


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