PTFB090901EA

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20 Efficiency 18 10 17 b090901 gr 1 0 31 33 35 37 39 41 43 45 47 49 Output Power, Avg. (dBm) Features Input and output internal matching Typical CW performance, 960 MHz, 28 V - Output power at P1dB = 90 W - Efficiency = 65% Typical two-carrier WCDMA performance, 960 MHz, 28 V - Average output power = 20 W - Linear Gain = 20.8 dB - Efficiency = 35% - Intermodulation distortion = –35 dBc Integrated ESD protection Low thermal resistance Pb-free and RoHS-compliant Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, ƒ = 960 MHz 3GPP sign...