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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB090901EA Package H-36265-2
PTFB090901FA Package H-37265-2
PTFB090901EA PTFB090901FA
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz
23 60
22
Gain 21
50 40
20 30
19 20
Efficiency 18 10
17
b090901 gr 1
0
31 33 35 37 39 41 43 45 47 49
Output Power, Avg. (dBm)
Features
• Input and output internal matching
• Typical CW performance, 960 MHz, 28 V - Output power at P1dB = 90 W - Efficiency = 65%
• Typical two-carrier WCDMA performance, 960 MHz, 28 V - Average output power = 20 W - Linear Gain = 20.8 dB - Efficiency = 35% - Intermodulation distortion = –35 dBc
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant
• Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, ƒ = 960 MHz 3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz
Characteristic
Symbol
Min
Gain Drain Efficiency Adjacent Channel Power Ratio
Gps
ηD
ACPR
19 36 —
All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Typ Max Unit
19.5 —
dB
40 — %
–35 –31.5 dBc
Rev. 04, 2012-02-23
PTFB090901EA PTFB090901FA
Confidential, Limited Internal Distribution
Target RF Characteristics (cont.)
Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 70 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ Max Unit
Gain Drain Efficiency Intermodulation Distortion
Gps
ηD
IMD
— 19.5 —
dB
— 48 — %
— –30 — dBc
DC Characteristics
Characteristic
Conditions
Symbol Min Typ Max Unit
Drain-source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
— — 1.0 µA
On-state Resistance
VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V
IDSS RDS(on)
— — 10.0 µA
— 0.123 —
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 650 mA
VGS
— 3.8 —
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
— — 1.0 µA
Maximum Ratings
Parameter Drain-source Voltage Gate-source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70°C, 85 W CW)
Symbol VDSS VGS TJ TSTG RθJC
Value 65
–6 to +10 200
–40 to +150 0.73
Unit V V °C °C
°C/W
Ordering Information
Type and Version
PTFB090901EA V1 PTFB090901EA V1 R250 PTFB090901FA V1 PTFB090901FA V1 R250
Order Code
PTFB090901EAV1XWSA1 PTFB090901EAV1R250XTMA1 PTFB090901FAV1XWSA1 PTFB090901FAV1R250XTMA1
Package
H-36265-2 H-36265-2 H-37265-2 H-37265-6/2
Package Description
Ceramic open-cavity, bolt-down Ceramic open-cavity, bolt-down Ceramic open-cavity, earless Ceramic open-cavity, earless
Shipping
Tray Tape & Reel, 250 pcs Tray Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 04, 2012-02-23
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFB090901EA PTFB090901FA
IMD (dBc), ACPR (dBc)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-15
-20 Efficiency
-25 IMD Up
-30 IMD Low
-35
60 50 40 30 20
-40
-45 31
10
ACPR
b090901 gr 3
0
34 37 40 43 46 49
Output Power, Avg. (dBm)
Efficiency (%) Imd (dBc)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA,
3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW
-20 IM3 Low
-25 IM3 Up
-30
960 MHz
-35
940 MHz 920 MHz
-40
-45 31
33 35 37 39 41 43 Output Power, Avg. (dBm)
b090901 gr 2
45 47
Drain Efficiency (%)
Intermodulaion Distortion (dBc)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
0 60
-10 Efficiency
50
-20 ACPR Low
-30 ACPR Up
-40
40 30 20
-50 10
-60 32
35 38 41 44 47 Output Power, Avg. (dBm)
b090901 gr 4
0
50
Drain Efficiency (%) Adjacent Channel Power Ratio (dB)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH,
100% clipping, PAR = 10 dB, 3.84 MHz BW
0 -10 -20 -30 -40 -50 -60
32
Efficiency
60 50
40
ACPU
30 20
ACPL
35 38 41 44 47 Output Power, Avg. (dBm)
10
b090901 gr 5
0
50
Data Sheet
3 of 14
Rev. 04, 2012-02-.