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PTFB090901FA Dataheets PDF



Part Number PTFB090901FA
Manufacturers Infineon
Logo Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet PTFB090901FA DatasheetPTFB090901FA Datasheet (PDF)

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior re.

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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20 Efficiency 18 10 17 b090901 gr 1 0 31 33 35 37 39 41 43 45 47 49 Output Power, Avg. (dBm) Features • Input and output internal matching • Typical CW performance, 960 MHz, 28 V - Output power at P1dB = 90 W - Efficiency = 65% • Typical two-carrier WCDMA performance, 960 MHz, 28 V - Average output power = 20 W - Linear Gain = 20.8 dB - Efficiency = 35% - Intermodulation distortion = –35 dBc • Integrated ESD protection • Low thermal resistance • Pb-free and RoHS-compliant • Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, ƒ = 960 MHz 3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz Characteristic Symbol Min Gain Drain Efficiency Adjacent Channel Power Ratio Gps ηD ACPR 19 36 — All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 14 Typ Max Unit 19.5 — dB 40 — % –35 –31.5 dBc Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Target RF Characteristics (cont.) Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 70 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Intermodulation Distortion Gps ηD IMD — 19.5 — dB — 48 — % — –30 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-state Resistance VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V IDSS RDS(on) — — 10.0 µA — 0.123 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS — 3.8 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Drain-source Voltage Gate-source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70°C, 85 W CW) Symbol VDSS VGS TJ TSTG RθJC Value 65 –6 to +10 200 –40 to +150 0.73 Unit V V °C °C °C/W Ordering Information Type and Version PTFB090901EA V1 PTFB090901EA V1 R250 PTFB090901FA V1 PTFB090901FA V1 R250 Order Code PTFB090901EAV1XWSA1 PTFB090901EAV1R250XTMA1 PTFB090901FAV1XWSA1 PTFB090901FAV1R250XTMA1 Package H-36265-2 H-36265-2 H-37265-2 H-37265-6/2 Package Description Ceramic open-cavity, bolt-down Ceramic open-cavity, bolt-down Ceramic open-cavity, earless Ceramic open-cavity, earless Shipping Tray Tape & Reel, 250 pcs Tray Tape & Reel, 250 pcs Data Sheet 2 of 14 Rev. 04, 2012-02-23 Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) PTFB090901EA PTFB090901FA IMD (dBc), ACPR (dBc) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz -15 -20 Efficiency -25 IMD Up -30 IMD Low -35 60 50 40 30 20 -40 -45 31 10 ACPR b090901 gr 3 0 34 37 40 43 46 49 Output Power, Avg. (dBm) Efficiency (%) Imd (dBc) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW -20 IM3 Low -25 IM3 Up -30 960 MHz -35 940 MHz 920 MHz -40 -45 31 33 35 37 39 41 43 Output Power, Avg. (dBm) b090901 gr 2 45 47 Drain Efficiency (%) Intermodulaion Distortion (dBc) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH, 43% clipping, PAR = 7.5 dB, 3.84 MHz BW 0 60 -10 Efficiency 50 -20 ACPR Low -30 ACPR Up -40 40 30 20 -50 10 -60 32 35 38 41 44 47 Output Power, Avg. (dBm) b090901 gr 4 0 50 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH, 100% clipping, PAR = 10 dB, 3.84 MHz BW 0 -10 -20 -30 -40 -50 -60 32 Efficiency 60 50 40 ACPU 30 20 ACPL 35 38 41 44 47 Output Power, Avg. (dBm) 10 b090901 gr 5 0 50 Data Sheet 3 of 14 Rev. 04, 2012-02-.


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