PTFB091507FH

PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power Sweep, CW VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 21.0 20.5 Gain 20.0 19.5 19.0 18.5 18.0 41 Efficiency 43 45 47 49 51 Output Power (dBm) 70 60 50 40 30 20 10 53 Features Broadband internal matching Wide video bandwidth Typical CW performance, 960 MHz, 28 V - Average output power = 160 W - Gain = 19.5 dB - Efficiency = 60% Integrated ESD protection Low thermal resistance Thermally enhanced package is P...