UNISONIC TECHNOLOGIES CO., LTD TF218
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC TF218 is an N-chan...
UNISONIC TECHNOLOGIES CO., LTD TF218
N-CHANNEL JUNCTION FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC TF218 is an N-channel junction field effect
transistor, and it can be specially used in electronic condenser microphone specially.
FEATURES
* Good voltage characteristics and transient characteristics.
JFET
ORDERING INFORMATION
Ordering Number
TF218G-x-AN3-R TF218G-x-AQ3-R Note: Pin Assignment: S: Source D: Drain
G: Gate
Package
SOT-523 SOT-723
Pin Assignment 123 SDG SDG
Packing
Tape Reel Tape Reel
MARKING
TF218-E3
TF218-E4
TF218-E5
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-093.F
TF218
JFET
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Drain Voltage
VGDO
-20
V
Gate Current
IG 10 mA
Drain Current
ID 1 mA
Power Dissipation
PD 100 mW
Junction Temperature
TJ 150 °С
Storage Temperature
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER G-D Breakdown Voltage Gate Off Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Input Resistance Output Resistance Total Harmonic Distortion Output Noise Vo...