PESD12VV1BL

PESD12VV1BL Very low capacitance bidirectional ESD protection diode Rev. 2 — 18 March 2013 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Bidirectional ESD protection of one line  ESD protection up to 30 kV  Low diode capacitance Cd = 17 pF  IEC 61000-4-2; level 4 (ESD)  Rated peak pulse power: PPPM = 290 W  IEC 61000-4-5 (surge); IPPM = 7.8 A  Ultra low leakage current IRM < 1 nA  AEC-Q101 qualified 1.3 Applications  Computers and peripherals  Audio and video equipment  Cellular handsets and accessories  Portable electronics  Communication systems 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit - - 12 V - 17 25 pF 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode cathode Simplified outline 12 Transparent top view Graphic symbol 12 sym045 NXP Semiconductors PESD12VV1BL Very low capacitance bidirectional ESD protection diode 3. Ordering information Table 3. Ordering information Type number Package Name Description PESD12VV1BL DFN1006...