2SC1306 Silicon NPN Transistor Final RF Power Output
Description: The 2SC1306 is a silicon NPN transistor in a TO220 ty...
2SC1306 Silicon
NPN Transistor Final RF Power Output
Description: The 2SC1306 is a silicon
NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
WINTransceiver
BCE
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = 150 Ohm), VCER
75V
Collector-Base Voltage, VCBO
80V
Emitter-Base Voltage, VEBO
5V
Collector Current, IC
Continuous
3A
Peak 5A
Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg
1.2W 10W +150°C -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency
V(BR)CBO IC = 100µA, IB = 0 V(BR)CER IC = 1mA, RBE = 150 Ohm V(BR)EBO IE = 100µA, IC = 0
ICBO VCB = 40V IE = 0 IEBO VEB = 4V, IC = 0 hFE VCE = 5V, IC = 0.5A VCE(sat) IC = 1A, IB = 0.1A VBE(sat) IC = 1A, IB = 0.1A fT VCE = 10V, IC = 0.1A Cob VCB = 10V, f = 1MHz PO VCC = 12V, Pin = 0.2W, f = 27MHz
80 - - V 75 - - V 5- - V - - 10 µA - - 10 µA 25 - 200 - 0.15 0.60 V - 0.9 1.2 V 100...