2SA1661

Silicon Planar Epitaxial Transistor FEATURES z High Voltage. z High Transistion Frequency. z Small Flat Package. Pb Lead-free APPLICATION z High Current Application. Production specification 2SA1661 ORDERING INFORMATION Type No. Marking 2SA1661 DO/DY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction and Storage Temperature -120 -120 -5 -800 -160 500 -55 to +150 Units V V V mA mA mW ℃ E094 Rev.A www.gmicroelec.com 1 Production specification Silicon Planar Epitaxial Transistor 2SA1661 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V Collector- emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter- base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-5V,IC=-100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1.0 V Base-emitter VBE VCE=-5V,IC=-500mA -1.0 V Transition frequency fT VCE=-5V, IC=-100mA 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 30 pF CLASSIFICATION OF hFE Rank Range Marking O 80-160 DO ...