2SA1669

SMD Type TransistIoCrs PNP Epitaxial Planar Silicon Transistors 2SA1669 Features High cutoff frequency : fT=3.0GHz typ. High power gain : MAG=11dB typ (f=0.9GHz) Small noise figure: NF=2.0dB typ (f=0.9GHz) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -20 -15 -3 -50 250 150 -55 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output Capacitance Reverse transfer capacitance Forward Transfer Gain Maximum Available Power Gain Noise Figure Symbol Testconditons IcBO VCB = -15V , IE = 0 IEBO VEB = -2V , IC = 0 hFE VCE = -10V , IC = -5mA fT VCE = -10V , IC = -5mA Cob VCB = -10V , f = 1MHz Cre VCB = -10V , f = 1MHz |S21e|2 VCE=-10V,IC=-5mA,f=0.9GHz MAG VCE=-10V,IC=-5mA,f=0.9GHz NF VCE=-10V,IC=-3mA,f=0.9GHz Marking Marking DB Min Typ Max Unit -0.1 ìA -0.1 ìA 15 1.5 3.0 MHz 1.0 1.5 pF 0.7 pF 5.0 dB 11 dB 2.0 dB www.kexin.com.cn 1 ...