BSZ0502NSI

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,30V BSZ0502NSI DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features Optimizedforhighperformancebuckconverters MonolithicintegratedSchottky-likediode Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 2.8 mΩ ID 40 A QOSS 13.5 nC QG(0V..4.5V) 9 nC OptiMOSTM5Power-MOSFET,30V BSZ0502NSI TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ0502NSI Package PG-TSDSON-8 FL Marking 0502NSI RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSZ0502NSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . ....