advance specification
GTVA221701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz
Description
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
• Input matched • Typical Pulsed CW performance, 1805 MHz, 48 V, single side
- Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB • Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power • GaN HEMT technology • High power density • High efficiency • RoHS-compliant
Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact Infineon about the future availability of these products.
GTVA261701FA Package H-37265J-2
Target RF Characteristics
Single- carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 48 V, IDQ = 300 mA, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 9.9 dB @ 0.01% CCDF
Characteristics
Conditions
Symbol Min Typ Max
Linear Gain
Gps — 19 —
Drain Efficiency
ƒ1 = 1805 MHz, POUT = 50 W avg
hD
—
38
—
Adjacent Channel Power Ratio
ACPR
—
–32
—
Linear Gain
Gps — 19 —
Drain Efficiency
ƒ2 = 2170 MHz, POUT = 50 W avg
hD
—
36
—
Adjacent Channel Power Ratio
ACPR
—
–28
—
Unit dB % dBc dB % dBc
All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-07-27
GTVA221701FA
advance specification
DC Characteristics (measured on wafer prior to packaging)
Characteristic Drain-source Breakdown Voltage
nGate Threshold Voltage
Gate Quiescent Voltage
oSaturated Drain Current
Conditions VGS = –8 V, ID = 20 mA VDS = 10 V, ID = 20 mA VDS = 50V, ID = 1.0 A VDS = 6.0 V, VGS = 2.0 V
Symbol V(BR)DSS VGS(th) VGS(Q)
IDS
Min 150 –3.8 — 15
Typ — –3.0 –2.8 18
Max — –2.3 — —
Unit V V V A
t iMaximum Ratings aParameter cDrain-source Voltage fiGate-source Voltage iOperating Voltage cGate Current
Drain Current
eJunction Temperature pStorage Temperature Range sThermal Resistance
Symbol
VDSS
VGS
VDD
IG
Id
TJ TSTG RqJC
Value 125
–10 to +2 0 to +50
20 7.5 225 –65 to +150 TBD
Unit V V V mA A °C °C
°C/W
Ordering Information
eType and Version cGTVA221701FA V1 R0 a d v a nGTVA221701FA V1 R2
Order Code TBD TBD
Package Description H-37265J-2, earless flange H-37265J-2, earless flange
Shipping Tape & Reel, 50 pcs Tape & Reel, 250 pcs
Advance Specification
2 of 4
Rev. 01, 2015-07-27
GTVA221701FA
advance specification
Package Outline Specifications
Package H-37265J-2
45° X .64
n[.025]
2X 6.35 [.250]
oD 2X 2.59±.51 [.102±.020]
t iFLANGE 10.16 a[.400]
CL
LID 10.16±.25 [.400±.010]
(15.34 [.604])
fi cFLANGE
4X R0.63 [R.025] MAX
G
CL
c iSPH 1.57 [.062]
p e1.02 s[.040]
10.16±.25 [.400±.010]
H-37265J-2_02_po_05-29-2015
10.16 [.400]
3.61±.38 [.142±.015]
S
eDiagram Notes—unless otherwise specified: c1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
n3. All tolerances ± 0.127 [.005] unless specified otherwise. a4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
v 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. dFind the latest and most complete information about products and packaging at the Infineon Internet page ahttp://www.infineon.com/rfpower
Advance Specification
3 of 4
Rev. 01, 2015-07-27
GTVA221701FA V1
Revision History
Revision Date 01 2015-07-27
Data Sheet Type Advance
Page All
Subjects (major changes since last revision) Data Sheet reflects advance specification for product development
i o nWe Listen to Your Comments tAny information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
aPlease send your proposal (including a reference to this document) to:
[email protected]
cTo request other information, contact us at: fi+1 877 465 3667 (1-877-GO-LDMOS) USA s p e c ior +1 408 776 0600 International a d v a n c eEdition 2015-07-27
Published by Infineon Technologies AG 85579 Neubiberg, Germany
© 2015 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Te.