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GTVA221701FA Dataheets PDF



Part Number GTVA221701FA
Manufacturers Infineon
Logo Infineon
Description Thermally-Enhanced High Power RF GaN HEMT
Datasheet GTVA221701FA DatasheetGTVA221701FA Datasheet (PDF)

advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input matched • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3d.

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advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input matched • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB • Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power • GaN HEMT technology • High power density • High efficiency • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact Infineon about the future availability of these products. GTVA261701FA Package H-37265J-2 Target RF Characteristics Single- carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 48 V, IDQ = 300 mA, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 9.9 dB @ 0.01% CCDF Characteristics Conditions Symbol Min Typ Max Linear Gain Gps — 19 — Drain Efficiency ƒ1 = 1805 MHz, POUT = 50 W avg hD — 38 — Adjacent Channel Power Ratio ACPR — –32 — Linear Gain Gps — 19 — Drain Efficiency ƒ2 = 2170 MHz, POUT = 50 W avg hD — 36 — Adjacent Channel Power Ratio ACPR — –28 — Unit dB % dBc dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Advance Specification 1 of 4 Rev. 01, 2015-07-27 GTVA221701FA advance specification DC Characteristics (measured on wafer prior to packaging) Characteristic Drain-source Breakdown Voltage nGate Threshold Voltage Gate Quiescent Voltage oSaturated Drain Current Conditions VGS = –8 V, ID = 20 mA VDS = 10 V, ID = 20 mA VDS = 50V, ID = 1.0 A VDS = 6.0 V, VGS = 2.0 V Symbol V(BR)DSS VGS(th) VGS(Q) IDS Min 150 –3.8 — 15 Typ — –3.0 –2.8 18 Max — –2.3 — — Unit V V V A t iMaximum Ratings aParameter cDrain-source Voltage fiGate-source Voltage iOperating Voltage cGate Current Drain Current eJunction Temperature pStorage Temperature Range sThermal Resistance Symbol VDSS VGS VDD IG Id TJ TSTG RqJC Value 125 –10 to +2 0 to +50 20 7.5 225 –65 to +150 TBD Unit V V V mA A °C °C °C/W Ordering Information eType and Version cGTVA221701FA V1 R0 a d v a nGTVA221701FA V1 R2 Order Code TBD TBD Package Description H-37265J-2, earless flange H-37265J-2, earless flange Shipping Tape & Reel, 50 pcs Tape & Reel, 250 pcs Advance Specification 2 of 4 Rev. 01, 2015-07-27 GTVA221701FA advance specification Package Outline Specifications Package H-37265J-2 45° X .64 n[.025] 2X 6.35 [.250] oD 2X 2.59±.51 [.102±.020] t iFLANGE 10.16 a[.400] CL LID 10.16±.25 [.400±.010] (15.34 [.604]) fi cFLANGE 4X R0.63 [R.025] MAX G CL c iSPH 1.57 [.062] p e1.02 s[.040] 10.16±.25 [.400±.010] H-37265J-2_02_po_05-29-2015 10.16 [.400] 3.61±.38 [.142±.015] S eDiagram Notes—unless otherwise specified: c1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. n3. All tolerances ± 0.127 [.005] unless specified otherwise. a4. Pins: D – drain; G – gate; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. v 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. dFind the latest and most complete information about products and packaging at the Infineon Internet page ahttp://www.infineon.com/rfpower Advance Specification 3 of 4 Rev. 01, 2015-07-27 GTVA221701FA V1 Revision History Revision Date 01 2015-07-27 Data Sheet Type Advance Page All Subjects (major changes since last revision) Data Sheet reflects advance specification for product development i o nWe Listen to Your Comments tAny information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. aPlease send your proposal (including a reference to this document) to: [email protected] cTo request other information, contact us at: fi+1 877 465 3667 (1-877-GO-LDMOS) USA s p e c ior +1 408 776 0600 International a d v a n c eEdition 2015-07-27 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Te.


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