GTVA220701FA

advance specification GTVA220701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 – 2170 MHz Description The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features Input matched Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power GaN HEMT technology High power density High efficiency RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact Infineon about the future availability of these products. GTVA220701FA Package H-37265J-2 Target RF Characteristics Single-carrier LTE Specifications (tested in Infineon test fixture) VDD = 48 V, IDQ = 200 mA, POUT = 6.3 W avg, ƒ1 = 2170 MHz, 3GPP signal, channel bandwidth = 20 MHz, peak/average = 9.6 dB @ 0.01% CCDF Characteristic Linear Gain Drain Efficiency Adjacent Channel Power Ratio Symbol Gps hD ACPR Min — — — Typ 21.3 26 –29.6 Max — — — Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ES...